Details

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BUY 2SD1328-S https://www.utsource.net/itm/p/7322379.html
2SD1328-S NPN Transistors(BJT) 25V 500mA/0.5A 200MHz 300~500 130mV/0.13V SOT-23/SC-59 marking 1DS lowvoltage amplifier DC-DCswitch

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	V CES	-	-	600	V	Maximum voltage between collector and emitter with base open.
Emitter-Base Voltage	V EBO	-	-	5	V	Maximum voltage between emitter and base.
Collector Current	I C	-	-	8	A	Continuous collector current at Tc = 25°C.
Power Dissipation	P T	-	-	125	W	Total power dissipation at Tc = 25°C.
Storage Temperature Range	T stg	-55	-	150	°C	Operating temperature range for storage.
Junction Temperature	T j	-55	-	150	°C	Maximum allowable junction temperature.

Instructions:

1. Mounting: Ensure the device is properly mounted on a heat sink to manage heat dissipation, especially when operating near maximum power levels.
2. Biasing: Carefully set biasing conditions to avoid exceeding the maximum ratings for V CES, V EBO, and I C.
3. Temperature Monitoring: Monitor the junction temperature to ensure it does not exceed 150°C, as prolonged exposure to higher temperatures can degrade performance or cause failure.
4. Handling Precautions: Handle the component with care to prevent damage from electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.
5. Storage Conditions: Store in a dry environment within the specified storage temperature range (-55°C to 150°C) to maintain reliability and performance.

(For reference only)