BAS40T/R

BAS40T/R

Category: Transistors

Specifications
SKU
7323085
Details

BUY BAS40T/R https://www.utsource.net/itm/p/7323085.html
BAS40T/R SBD Schottky Barrier Diodes 40V 120mA/0.12A 1V SOT-23/SC-59 marking S40 fast switch
Parameter Symbol Conditions Min Typ Max Unit
Forward Voltage V_F IF = 20 mA 1.6 2.0 V
Reverse Current I_R VR = 5 V 100 μA
Peak Forward Current I_FM t_p = 10 ms 100 mA
Continuous Forward Current I_F T_A = 25°C 20 mA
Power Dissipation P_D T_A = 25°C 100 mW
Operating Temperature Range T_op -40 85 °C
Storage Temperature Range T_stg -40 125 °C

Instructions for Use:

  1. Mounting and Handling:

    • Handle the BAS40T/R with care to avoid damage to leads and body.
    • Ensure correct orientation during mounting to prevent short circuits.
  2. Electrical Connections:

    • Connect the device ensuring that the forward voltage (V_F) does not exceed 2.0V at a forward current (I_F) of 20mA.
    • Keep reverse current (I_R) below 100μA when subjected to a reverse voltage (VR) of 5V.
  3. Current Limitation:

    • Do not exceed the peak forward current (I_FM) of 100mA for pulse durations up to 10ms.
    • Limit continuous forward current (I_F) to 20mA to avoid overheating.
  4. Thermal Considerations:

    • Ensure adequate heat dissipation if operating near the maximum power dissipation (P_D) of 100mW.
    • Operate within the specified temperature range (-40°C to 85°C) for optimal performance.
  5. Storage:

    • Store in a dry environment within the storage temperature range (-40°C to 125°C).
  6. Testing:

    • Verify all connections and parameters before applying power to ensure compliance with operational limits.
(For reference only)

View more about BAS40T/R on main site