Details

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BUY 2SB1051 https://www.utsource.net/itm/p/7326322.html
2SB1051 PNP transistors(BJT) -40V -1A 150MHz 82~180 -500mV/-0.5V SOT-23/SMT3 marking AQS low-frequency power amplifier

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	50	V	IC = 0.5mA
Emitter-Collector Voltage	VECE	-	-	50	V	IC = 0.5mA
Base-Emitter Voltage (Saturation)	VBE(sat)	-	0.7	1.2	V	IC = 100mA, IB = 10mA
Collector-Emitter Saturation Voltage	VCE(sat)	-	0.3	0.6	V	IC = 100mA, IB = 10mA
DC Current Gain (hFE)	hFE	50	150	400	-	IC = 10mA, VCE = 5V
Maximum Collector Current	IC	-	-	150	mA	Tc = 25°C
Power Dissipation	PD	-	-	625	mW	Tc = 25°C
Operating Junction Temperature	TJ(op)	-55	-	150	°C	-
Storage Temperature	Tstg	-55	-	150	°C	-

Instructions for Use:

1. Biasing and Operation:

   • Ensure the base-emitter voltage (VBE) does not exceed the maximum specified limit to avoid damage.
   • For optimal performance, operate within the recommended current gain (hFE) range by setting appropriate base current (IB).

2. Power Dissipation:

   • Keep power dissipation within the maximum limit (PD) to prevent overheating. Consider heat sinking if operating near maximum power levels.

3. Temperature Considerations:

   • Operate within the specified junction temperature (TJ(op)) range to ensure reliability. Avoid exceeding storage temperature limits (Tstg).

4. Voltage Ratings:

   • Do not exceed the collector-emitter voltage (VCEO) or emitter-collector voltage (VECE) ratings to prevent breakdown.

5. Current Handling:

   • The maximum collector current (IC) should not be exceeded to avoid damaging the transistor.

6. Mounting and Handling:

   • Handle with care to avoid static damage. Follow proper mounting procedures to ensure good thermal contact if using a heatsink.

(For reference only)