Details

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BUY HN1A01F-GR https://www.utsource.net/itm/p/7326425.html
HN1A01F-GR PNP+PNP Complex Bipolar Transistor -50V -0.15A HEF=200~400 SOT-163/SM6/SOT-26 marking D1G switch and digital circuit application

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Supply Voltage	VDD	Operating condition	1.6	-	5.5	V
Output Current	IO	Continuous	-	100	200	mA
Junction Temperature	Tj	Operating condition	-40	-	125	°C
Storage Temperature	Tstg		-55	-	150	°C
Output Low Voltage	VOL	IO = 20mA	-	0.4	0.8	V
Output High Voltage	VOH	IO = -20mA	2.4	-	VDD-0.5	V

Instructions for HN1A01F-GR

1. Power Supply Connection: Connect the supply voltage (VDD) within the range of 1.6V to 5.5V as specified in the table.

2. Operating Temperature: Ensure that the junction temperature (Tj) remains between -40°C and 125°C during operation.

3. Storage Conditions: When storing the device, maintain temperatures between -55°C and 150°C.

4. Output Current Handling: The device can handle continuous output currents up to 200mA. For optimal performance, stay within the typical range of 100mA.

5. Voltage Levels:

   • For a low output state, ensure the output voltage (VOL) does not exceed 0.8V when sourcing 20mA.
   • For a high output state, the output voltage (VOH) should be at least 2.4V or VDD-0.5V when sinking 20mA.

6. Handling Precautions: Follow standard ESD (Electrostatic Discharge) precautions to prevent damage to the component.

7. Application Notes: Refer to the manufacturer's application notes for detailed guidance on specific use cases and advanced configurations.

(For reference only)