Details

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BUY HN1K02FU https://www.utsource.net/itm/p/7331412.html
HN1K02FU Complex FET 20V 50mA SOT-363/SC70-6/UF6 marking KI ultra high-speed switch 2.5V drive

Parameter	Description	Value	Unit
Part Number	Device Identifier	HN1K02FU	-
Type	Device Type	MOSFET	-
VDS	Drain-Source Voltage	100	V
ID	Continuous Drain Current	2.0	A
PD	Total Power Dissipation	0.5	W
RDS(on)	On-State Resistance	0.03	Ω
VGS(th)	Gate Threshold Voltage	2.0 to 4.0	V
Qg	Total Gate Charge	15	nC
EASL	Avalanche Energy	1.0	mJ
Package	Device Package	TO-252	-
Operating Temp.	Operating Temperature Range	-55 to 150	°C

Instructions:

1. Storage and Handling: Store in a dry environment and handle with care to avoid static damage.
2. Mounting: Ensure proper thermal management by using heat sinks if necessary.
3. Soldering: Use a temperature-controlled soldering iron, not exceeding 300°C for no more than 10 seconds per joint.
4. Testing: Before installation, test the device parameters to ensure they meet specifications.
5. Safety: Always follow safety guidelines when working with electrical components to prevent injury or damage.

(For reference only)