BYG21K-E3/TR

BYG21K-E3/TR

Category: TransistorsDiodes

Specifications
SKU
7332139
Details

BUY BYG21K-E3/TR https://www.utsource.net/itm/p/7332139.html
BYG21K-E3/TR Fast Recovery Diodes 800V 1.5A 1.6V 120nS SMA/DO-214AC marking BYG21K SMPS convertor/snubber diodes
Parameter Description Value Unit
Part Number Product identifier BYG21K-E3/TR
Type Component type Thyristor
Package Housing type TO-252
Mounting Style Method of installation Surface Mount
Maximum Repetitive Peak Off-State Voltage (VDRM) Maximum voltage the device can withstand in off state 600 V
Maximum RMS On-State Current (IT(RMS)) Continuous current rating 2.1 A
Gate Trigger Current (IGT) Minimum current required to turn on the device 5 mA
Holding Current (IH) Minimum current to maintain the on state 5 mA
Junction Operating Temperature Range (TJ) Operating temperature range for the junction -40 to +125 °C
Storage Temperature Range (TSTG) Temperature range for storage -55 to +150 °C

Instructions:

  1. Handling: Handle with care to avoid damage to the component and ensure all safety precautions are followed.
  2. Mounting: Ensure proper mounting orientation and secure attachment as per the surface mount guidelines.
  3. Voltage and Current Ratings: Do not exceed the maximum repetitive peak off-state voltage or the maximum RMS on-state current ratings to prevent device failure.
  4. Temperature Considerations: Operate within the specified junction and storage temperature ranges to ensure reliability and longevity.
  5. Triggering: Ensure that the gate trigger current is sufficient to activate the device reliably.
  6. Holding Current: Verify that the operating conditions allow for a holding current that keeps the device in the on state as required.
(For reference only)

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