Details

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BUY 2SD2185-R https://www.utsource.net/itm/p/7334161.html
2SD2185-R NPN Transistors(BJT) 50V 3A 110MHz 120~240 150mV/0.15V SOT-89/SC-62 marking IHR low frequency output amplifier

Parameter	Symbol	Value	Unit	Conditions
Collector-Emitter Voltage	VCEO	800	V
Collector-Base Voltage	VCBO	800	V
Emitter-Base Voltage	VEBO	5	V
Continuous Collector Current	ICM	12	A	Tc = 25°C
Pulse Collector Current	ICM(PULSE)	36	A	Tc = 25°C, Pulse Width ≤ 1 ms
Power Dissipation	Ptot	90	W	Tc = 25°C
Junction Temperature	Tj	-55 to +150	°C
Storage Temperature	Tstg	-55 to +150	°C

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking for the device to handle its maximum power dissipation.
   • Handle with care to avoid damage to leads and body.

2. Electrical Connections:

   • Connect the collector, base, and emitter according to your circuit design.
   • Ensure all connections are secure and insulated as necessary.

3. Operating Conditions:

   • Do not exceed the maximum ratings provided in the table.
   • Operate within the specified junction temperature range to ensure reliable performance.

4. Storage:

   • Store in a dry environment within the storage temperature range to prevent damage.

5. Pulse Operation:

   • For pulse applications, adhere to the specified pulse width conditions to avoid overheating.

6. Testing:

   • Perform initial testing under controlled conditions to validate performance parameters before full-scale deployment.

(For reference only)