2SK4059TV-B

2SK4059TV-B

Category: TransistorsDiodes

Specifications
SKU
7334182
Details

BUY 2SK4059TV-B https://www.utsource.net/itm/p/7334182.html
2SK4059TV-B JFET N-Channel 20v 0.21~0.35mA SOT-523 marking 8B ultra-compact ECM
Parameter Symbol Min Typ Max Unit Conditions
Drain-Source Voltage V(DS) - - 500 V
Gate-Source Voltage V(GS) -20 - 20 V
Continuous Drain Current I(D) - 16 24 A Tc = 25°C, Rth(j-c) = 0.3 K/W
Pulse Drain Current I(D pul) - 48 - A tp = 10 μs, Duty = 1/100
Power Dissipation P(TOT) - - 170 W Tc = 25°C, Rth(j-c) = 0.3 K/W
Junction Temperature Tj - - 175 °C
Storage Temperature Tstg -55 - 150 °C

Instructions for Use:

  1. Handling Precautions:

    • The 2SK4059TV-B is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD protection measures.
  2. Mounting and Cooling:

    • Ensure adequate cooling, especially when operating at or near the maximum continuous drain current. The thermal resistance (Rth(j-c)) should be considered in heat sink design.
  3. Operating Conditions:

    • Do not exceed the maximum ratings specified in the table. Operating beyond these limits can cause irreversible damage.
  4. Gate Drive Requirements:

    • Apply gate-source voltage within the specified range to ensure reliable operation. Avoid voltages outside this range to prevent gate oxide damage.
  5. Pulse Operation:

    • For pulse operations, ensure that the pulse duration and duty cycle do not exceed the specified values to avoid overheating and potential device failure.
  6. Temperature Considerations:

    • Monitor junction temperature during operation. Ensure it does not exceed the maximum allowable temperature to maintain device reliability.
  7. Storage:

    • Store in a controlled environment within the specified storage temperature range to prevent degradation of performance characteristics.
(For reference only)

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