Details

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BUY SI4800BDY-T1-E3 https://www.utsource.net/itm/p/7334802.html
SI4800BDY-T1-E3 MOSFET N-Channel 30v 9A 8-SOIC marking 4800B low on-resistance/low-voltage drive

Parameter	Description	Value
Part Number	Full part number of the device	SI4800BDY-T1-E3
Device Type	Type of semiconductor device	MOSFET
Configuration	Channel configuration	N-Channel
Drain Source Voltage	Maximum drain-to-source voltage	60V
Continuous Drain Current	Continuous drain current at specified conditions	2.5A (at 25°C)
Pulse Drain Current	Peak pulse drain current	8A
Gate Source Voltage	Maximum gate-to-source voltage	±20V
Rds(on)	On-resistance at given Vgs and Id	0.07Ω (at Vgs=10V, Id=2.5A)
Power Dissipation	Maximum power dissipation	1.5W (at TJ = 25°C)
Junction Temperature	Maximum junction temperature	150°C
Storage Temperature	Operating temperature range for storage	-55°C to +150°C
Package Type	Package type	TO-252 (DPAK)

Instructions:

1. Installation: Ensure that the device is handled with care to avoid damage to the leads or body. Use appropriate tools and techniques when soldering.
2. Operating Conditions: Operate the device within the specified voltage and current limits to ensure reliable performance and prevent damage.
3. Heat Management: For applications where the device will operate near its maximum power dissipation, provide adequate heat sinking to maintain junction temperatures below the maximum rated value.
4. Storage and Handling: Store in a dry environment and handle with ESD precautions to prevent damage from static electricity.
5. Mounting: Follow manufacturer guidelines for mounting orientation and torque specifications to ensure proper mechanical integrity.
6. Testing: Before final assembly, test the device under controlled conditions to verify it meets all performance specifications.

(For reference only)