MURS160-F

MURS160-F

Category: TransistorsDiodes

Specifications
SKU
7335986
Details

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MURS160-F Fast Recovery Diodes SMB/DO-214AA marking U1JB low leakage current/high efficiencyfast recovery
Parameter Symbol Conditions Min Typ Max Unit
Forward Voltage VF IF = 1.0A 0.9 1.1 1.3 V
Reverse Current IR VR = 400V, Tj=25°C - 5 10 μA
Maximum Repetitive VRRM - 400 - V
Peak Forward IFSM tp=8.3ms, sin - 6.0 - A
Operating Junction Tjop -55 - 150 °C
Storage Temperature Tstg -55 - 150 °C

Instructions for MURS160-F:

  1. Mounting and Handling:

    • Handle the device with care to avoid mechanical damage.
    • Ensure proper heat dissipation if used in high-power applications.
  2. Electrical Connections:

    • Connect the device according to the circuit diagram provided in your design.
    • Ensure that the polarity is correct to prevent damage.
  3. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table.
    • Operate within specified temperature ranges to ensure reliable performance.
  4. Storage:

    • Store in a dry environment within the storage temperature range to prevent degradation.
  5. Testing:

    • Test the device under controlled conditions before integrating into final applications.
    • Verify all parameters meet the specifications provided.
  6. Safety Precautions:

    • Always use appropriate safety measures when handling electrical components.
    • Avoid exposing the device to excessive voltage or current surges.
(For reference only)

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