Details

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BUY 2SC5625 https://www.utsource.net/itm/p/7336258.html
2SC5625 NPN Transistors(BJT) 300V 100mA/0.1A 40MHz 60~305 <500mV/0.5V SOT-23/SC-59 marking UW low-frequency amplifier

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO				80	V
Collector-Base Voltage	VCBO				80	V
Emitter-Base Voltage	VEBO		-5		5	V
Collector Current	IC	Continuous			1.5	A
Total Power Dissipation	PT	Ta = 25°C			125	mW
Junction Temperature	Tj		-55		150	°C
Storage Temperature	Tstg		-55		150	°C

Instructions for Use:

1. Handling Precautions: Avoid exceeding the maximum ratings to prevent damage to the device.
2. Mounting: Ensure proper heat dissipation if operating near maximum power dissipation limits.
3. Biasing: For optimal performance, bias the transistor within its safe operating area (SOA).
4. Storage: Store in a dry place away from direct sunlight and excessive heat.
5. Soldering: Do not exceed soldering temperatures of 260°C for more than 10 seconds per terminal.
6. Testing: During testing, ensure that the junction temperature does not exceed 150°C.
7. Application: Suitable for general-purpose switching and amplification applications.

(For reference only)