Details

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BUY MX29GL256FHXFI-90Q https://www.utsource.net/itm/p/7576991.html
FLASH - NOR Memory IC 256Mb (32M x 8) Parallel 90ns 64-LFBGA, CSP (11x13)

Parameter	Description	Value
Device Type	Flash Memory	MX29GL256FHXFI-90Q
Memory Density	Total Bits	256 Mbit
Organization	Data Width	x8/x16
Package Type	-	TSOP II
Number of Pins	-	48-pin
Operating Voltage (Vcc)	Supply Voltage	3.3V ± 0.3V
Operating Temperature Range	Temp. Range	-40°C to +85°C
Access Time	tAA	70ns (max)
Programming Voltage	Vpp	Not Required (Single Supply)
Erase/Program Cycle	Endurance	100,000 cycles (min)
Data Retention	-	20 years (min)
Write Protection	Feature	Hardware and Software Protection

Instructions:

1. Power Supply Requirements: Ensure the supply voltage is within the specified range of 3.0V to 3.6V.
2. Initialization: Upon power-up, initialize the device by following the initialization sequence detailed in the datasheet.
3. Addressing: Use the appropriate addressing mode based on whether the device is configured for x8 or x16 data width.
4. Programming: Follow the programming algorithm provided in the datasheet for writing data. Ensure that write protection features are properly configured to prevent accidental data overwrite.
5. Erase Operations: Perform block or sector erase operations as required. Ensure no active writes are occurring before initiating an erase cycle.
6. Temperature Considerations: Operate within the specified temperature range to ensure reliable performance.
7. Handling Precautions: Handle with care to avoid damage from electrostatic discharge (ESD). Use proper ESD precautions when handling the device.
8. Mounting: Ensure proper mounting on the PCB to maintain electrical and mechanical integrity.

For detailed timing diagrams, command sequences, and other specific information, refer to the official datasheet of the MX29GL256FHXFI-90Q.

(For reference only)