Details

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BUY K6X1008C2D-GB70 https://www.utsource.net/itm/p/7722794.html

Parameter	Description
Product Name	K6X1008C2D-GB70
Type	DRAM
Capacity	64 Mbit (8M x 8)
Organization	8M x 8
Voltage (Vcc)	3.3V
Operating Temperature	-40°C to +85°C
Package Type	BGA (Ball Grid Array)
Pitch	1.27 mm
Data Width	8 bits
Access Time (tAA)	70 ns
Refresh Rate	8K refresh cycles per 64ms
Supply Current	100 mA (Active), 10 mA (Standby)
CAS Latency	CL=2
Input/Output Voltage	Vcc = 3.3V

Instructions for Use:

1. Power Supply Requirements: Ensure the power supply voltage is set to 3.3V as specified. Incorrect voltage can damage the device.
2. Signal Integrity: Maintain proper signal integrity by ensuring short and matched trace lengths between the memory and controller.
3. Decoupling Capacitors: Place decoupling capacitors close to the power pins of the DRAM to reduce noise and improve stability.
4. Refresh Timing: Implement the required refresh rate of 8K refresh cycles per 64ms to prevent data loss.
5. Operating Environment: Operate within the temperature range of -40°C to +85°C to ensure reliable performance.
6. Handling Precautions: Handle with care to avoid damage to the BGA package, especially during soldering or rework processes.
7. Storage Conditions: Store in a dry environment and follow anti-static precautions to prevent damage from electrostatic discharge.

For detailed application notes and further technical support, refer to the manufacturer's documentation or contact the supplier directly.

(For reference only)