Details

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BUY K9GAG08U0E-SCB0 https://www.utsource.net/itm/p/7958715.html

Parameter	Description	Value/Specification
Device Type	NAND Flash Memory	128 Gb (16 GB)
Package Type	BGA	169-Ball SCB0
Interface	Toggle Mode DDR Interface	4.0
Voltage Supply (Vcc)	Core Voltage	1.8 V ± 0.1 V
Temperature Range	Operating Temperature	-40°C to +85°C
Data Retention	Data Retention Time	10 years
Program/Erase Cycle	Endurance	3,000 Program/Erase Cycles
Access Time	Page Read Access Time	tR = 35 ns
Block Size	Block Size	256 pages/block
Page Size	Page Size	8 KB + 0.5 KB ECC
Die Configuration	Die Configuration	8 die per package
Error Correction Code	On-chip Error Correction	BCH 8-bit/512 bytes

Instructions for Use:

1. Power Supply: Ensure the supply voltage is within the specified range of 1.8 V ± 0.1 V.
2. Initialization: After applying power, allow a stabilization period as specified in the datasheet before initiating any commands.
3. Command Sequence: Follow the command protocol specified in the device datasheet for read, write, and erase operations.
4. Error Handling: Implement error correction mechanisms as per the on-chip BCH 8-bit/512 bytes ECC.
5. Thermal Management: Operate within the temperature range of -40°C to +85°C to ensure reliable performance.
6. Programming: Adhere to the endurance limit of 3,000 program/erase cycles to avoid premature wear-out.
7. Storage: When not in use, store the device in an environment that does not exceed the operating temperature limits to maintain data retention integrity.

For detailed timing diagrams, pin configurations, and advanced programming guidelines, refer to the full datasheet provided by the manufacturer.

(For reference only)