Details

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BUY 2SA720 https://www.utsource.net/itm/p/8022704.html

Parameter	Symbol	Min	Typ.	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	40	V
Collector-Base Voltage	VCBO	-	-	60	V
Emitter-Base Voltage (Reverse)	VEBO	-	-5	-1	V
Collector Current	IC	-	-	2	A
Base Current	IB	-	-	0.2	A
DC Current Gain	hFE	30	100	300	-	IC = 150mA, VCE = 5V
Transition Frequency	fT	-	8	-	MHz
Power Dissipation	PD	-	-	625	mW	Tc = 25°C
Storage Temperature Range	Tstg	-55	-	150	°C
Operating Junction Temperature	Tj	-55	-	150	°C

Instructions for Use:

1. Mounting: Ensure the device is securely mounted to avoid mechanical stress on the leads.
2. Heat Dissipation: For applications where the transistor may operate at high temperatures or with high current, ensure adequate heat dissipation to keep junction temperature within specified limits.
3. Biasing: Proper biasing of the base-emitter junction is critical to achieve optimal performance and avoid thermal runaway.
4. Storage and Handling: Store in a dry place and handle with care to prevent damage from electrostatic discharge (ESD).
5. Testing: When testing the device, ensure not to exceed the maximum ratings listed to prevent damage.
6. Derating: For continuous operation, derate power dissipation linearly above 25°C ambient temperature to maintain reliability.

Note: Always refer to the manufacturer's datasheet for the most accurate and detailed information.

(For reference only)