Details

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BUY FQA40N25 https://www.utsource.net/itm/p/8023077.html

Parameter	Symbol	Value	Unit	Conditions
Maximum Drain Current	ID	40	A	@ VGS = 10V, T = 25°C
Maximum Drain-Source Voltage	VDS	250	V
Maximum Gate-Source Voltage	VGS	±20	V
Power Dissipation	PD	280	W	@ TC = 25°C
Junction Temperature	TJ	-55 to +175	°C
Storage Temperature	TSTG	-55 to +175	°C
Total Gate Charge	QG	39	nC	@ VDS = 250V, ID = 40A
Input Capacitance	Ciss	6900	pF	@ VDS = 25V, f = 1MHz
Output Capacitance	Coss	190	pF	@ VDS = 25V, f = 1MHz
Reverse Transfer Capacitance	Crss	390	pF	@ VDS = 25V, f = 1MHz

Instructions for Use:

1. Handling Precautions:

   • Ensure proper ESD protection when handling the FQA40N25.
   • Avoid exceeding the maximum ratings listed in the table.

2. Mounting:

   • Use appropriate mounting techniques to ensure good thermal contact and heat dissipation.
   • Securely fasten the device to a heatsink if necessary.

3. Electrical Connections:

   • Connect the drain (D), gate (G), and source (S) terminals accurately according to your circuit design.
   • Ensure that the gate drive voltage does not exceed the specified maximum gate-source voltage.

4. Thermal Management:

   • Monitor the junction temperature to prevent overheating.
   • Utilize adequate cooling methods such as forced air or liquid cooling if operating near the maximum power dissipation.

5. Testing and Validation:

   • Perform initial testing under controlled conditions to validate the performance parameters.
   • Gradually increase the load to ensure stable operation within the specified limits.

(For reference only)