Details

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BUY IRF5210PBF https://www.utsource.net/itm/p/8026925.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	V(DS)	-	-	100	V
Gate-Source Voltage	V(GS)	-20		20	V
Continuous Drain Current	I(D)	-	37	48	A	TC = 25°C
Pulse Drain Current	I(D)	-	96	-	A	t(p) = 10 μs, TC = 25°C
Power Dissipation	P(TOT)	-	-	160	W	TC = 25°C
Junction Temperature	T(j)	-	-	175	°C
Storage Temperature	T(stg)	-55		150	°C

Instructions for Use:

1. Handling Precautions: The IRF5210PBF is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD protection measures.
2. Mounting: Ensure proper heat sinking when operating at high currents or power levels to maintain junction temperature within specified limits.
3. Gate Drive: Apply gate voltage within the specified range to avoid damage and ensure reliable operation. Exceeding the maximum V(GS) can cause immediate failure.
4. Current Limiting: When operating in pulse mode, ensure that pulse width and frequency do not exceed safe operating area (SOA) limits.
5. Thermal Management: Monitor and manage thermal conditions to prevent overheating. Use adequate heatsinking or cooling methods if necessary.
6. Storage and Operation: Store and operate the device within the recommended storage and junction temperature ranges to ensure long-term reliability.

For detailed specifications and advanced applications, refer to the manufacturer's datasheet.

(For reference only)