Details

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Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source Voltage	V(DS)		-	-	200	V
Gate-Source Voltage	V(GS)		-	-	±20	V
Continuous Drain Current	I(D)	V(DS) = 25V, Tc = 25°C	18	-	-	A
Pulse Drain Current	I(D pul)	t(on) = 10ms, Duty Cycle ≤ 3%	45	-	-	A
Total Dissipation	P(TOT)	TC = 25°C	-	-	160	W
Junction Temperature	T(j)		-	-	175	°C
Storage Temperature	T(stg)		-55	-	150	°C

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings provided in the table to prevent damage to the device.
   • Ensure proper heat sinking when operating at high current or power levels.

2. Mounting:

   • Use recommended mounting torque on screws to ensure good thermal contact and electrical connection.
   • Ensure that the mounting surface is flat and clean to maximize thermal conductivity.

3. Biasing and Drive:

   • Apply gate voltage within the specified limits to avoid gate oxide damage.
   • Ensure that the gate drive circuitry can supply sufficient current during switching transitions.

4. Switching Characteristics:

   • Be aware of the device’s turn-on and turn-off times under different conditions to optimize performance in your application.
   • Consider using a snubber network if high di/dt creates excessive noise or voltage spikes.

5. Storage and Handling:

   • Store in a dry environment and handle with care to prevent electrostatic discharge (ESD) damage.
   • Follow anti-static precautions when handling the device.

6. Environmental Considerations:

   • Operate within the specified temperature range to ensure reliable operation.
   • Avoid exposing the device to corrosive environments which could degrade its performance.

For detailed specifications and additional information, refer to the manufacturer's datasheet.

(For reference only)