IXTQ52N30P

IXTQ52N30P


Specifications
SKU
8047386
Details

BUY IXTQ52N30P https://www.utsource.net/itm/p/8047386.html

Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Voltage Vceo 300 V
Emitter-Collector Voltage Veco -5 V
Collector Base Voltage Vcbo 300 V
Continuous Collector Current Ic Tc = 25°C 10 A
Pulse Collector Current Icm t = 8.3 ms, Rep rate 2 Hz 20 A
Power Dissipation Ptot Tc = 25°C 140 W
Junction Temperature Tj -55 175 °C
Storage Temperature Tstg -55 150 °C

Instructions for Use:

  1. Installation:

    • Ensure the device is mounted on a heatsink if operating near maximum power dissipation to maintain junction temperature within safe limits.
    • Follow proper anti-static precautions during handling and installation.
  2. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table as this can lead to device failure.
    • Keep the junction temperature within the specified range (-55°C to 175°C) to ensure reliable operation.
  3. Storage:

    • Store the device in a dry environment within the storage temperature range (-55°C to 150°C).
  4. Electrical Connections:

    • Connect the collector, emitter, and base terminals correctly to avoid damage.
    • Use appropriate wire gauges and connectors to handle the rated currents and voltages.
  5. Pulse Operation:

    • For pulse applications, ensure that pulse width and repetition rate do not exceed the specified conditions to prevent overheating or damage.
  6. Testing:

    • During testing, apply voltages and currents gradually to monitor the device's response and ensure it operates within specifications.
  7. Environmental Considerations:

    • Protect the device from excessive moisture, corrosive environments, and mechanical stress which can affect performance and longevity.
(For reference only)

View more about IXTQ52N30P on main site