Details

---

BUY M29F200BT70M1 https://www.utsource.net/itm/p/8146014.html

Parameter	Description	Value
Device Type	Flash Memory	M29F200BT70M1
Memory Size	Total Memory Capacity	2 Mbits
Organization	Data Organization	256K x 8 bits
Voltage - Supply (Vcc)	Operating Voltage Range	2.7 V to 3.6 V
Temperature (Toperating)	Operating Temperature Range	-40°C to +85°C
Access Time (taa)	Access Time	70 ns
Package Type	Package Style	TSOP II-48
Erase Sector Size	Sector Erase Size	64 Kbytes
Programming Voltage	Voltage for Programming	Vpp = Vcc
Block Protection	Block Protection Features	Software Data Protection
Write Cycle Time	Time Required for a Write Cycle	5 ms
Endurance	Typical Endurance Cycles	100,000 cycles
Data Retention	Guaranteed Data Retention	10 years

Instructions for Use:

1. Power Supply: Ensure the supply voltage is within the specified range of 2.7 V to 3.6 V.
2. Initialization: Before performing any read or write operations, initialize the device according to the manufacturer’s guidelines.
3. Writing Data: To write data, ensure the address lines are correctly set and use the appropriate command sequence as specified in the datasheet.
4. Erasing Sectors: For sector erase operations, issue the sector erase command followed by the address of the sector to be erased.
5. Reading Data: Set the address lines to the desired location and initiate a read cycle.
6. Protection: Utilize the software data protection features to prevent accidental writes or erasures.
7. Handling: Handle the device with care to avoid ESD damage, especially during soldering or handling outside protective packaging.
8. Storage: Store in a dry, cool place when not in use to ensure longevity and reliability.

(For reference only)