S3FC40DXZZ-QA8D

S3FC40DXZZ-QA8D


Specifications
SKU
8149400
Details

BUY S3FC40DXZZ-QA8D https://www.utsource.net/itm/p/8149400.html

Parameter Description
Part Number S3FC40DXZZ-QA8D
Type Flash Memory
Capacity 40 Gb
Interface Toggle Mode NAND Flash
Voltage - Supply (Vcc) 1.8 V to 3.6 V
Operating Temperature -40°C to +85°C
Package Type BGA (Ball Grid Array)
Pin Count 86
Data Bus Width 8-bit / 16-bit
Programming Voltage Same as Vcc (1.8 V to 3.6 V)
ECC Support Yes
Endurance Up to 3,000 Program/Erase Cycles
Retention 10 years at 25°C
Features Power-On Reset, Auto Refresh, Block Protect, Error Correction Code (ECC)

Instructions:

  1. Power Supply: Ensure the supply voltage (Vcc) is within the specified range of 1.8 V to 3.6 V.
  2. Temperature Range: Operate the device within the temperature range of -40°C to +85°C for reliable performance.
  3. Interface Configuration: Configure the interface according to the Toggle Mode NAND Flash specifications. Ensure correct settings for 8-bit or 16-bit data bus width.
  4. Error Correction: Utilize the built-in ECC support to manage and correct errors during read/write operations.
  5. Programming: Use the same supply voltage for programming as for normal operation.
  6. Handling: Handle with care to avoid damage to the BGA package and pins.
  7. Endurance Management: Be aware of the endurance limit of up to 3,000 program/erase cycles per block to optimize usage.
  8. Data Retention: Store data in environments close to 25°C for optimal retention over the specified 10-year period.
(For reference only)

View more about S3FC40DXZZ-QA8D on main site