Details

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BUY JS28F256M29EWH https://www.utsource.net/itm/p/8149981.html

Parameter	Description	Value	Unit
Device Type	Flash Memory	JS28F256M29EWH
Storage Capacity	Total memory capacity	256 Mbit
Organization	Memory organization	2,097,152 x 16
Voltage Supply (Vcc)	Operating voltage range	2.7 - 3.6	V
Access Time	Typical access time	70	ns
Package Type	Packaging type	TSOP II-56
Operating Temperature Range	Temperature range for operation	-40 to +85	°C
Write Cycle Time	Time required to complete a write cycle	2 ms
Block Erase Time	Time required to erase a block	200 ms
Data Retention	Duration data is retained	10 years
Endurance	Number of program/erase cycles per sector	100,000

Instructions

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the specified range of 2.7V to 3.6V.

2. Operating Temperature:

   • Operate the device within the temperature range of -40°C to +85°C to ensure reliable performance.

3. Write Operations:

   • Each write cycle takes approximately 2 milliseconds. Ensure that the device is not accessed during this period to prevent data corruption.

4. Erase Operations:

   • A block erase operation requires about 200 milliseconds. Do not perform any read or write operations during an erase cycle.

5. Data Handling:

   • For optimal data retention, do not exceed the endurance limit of 100,000 program/erase cycles per sector.

6. Installation:

   • Install the device using standard TSOP II-56 packaging guidelines to ensure proper electrical and mechanical connections.

7. Access Times:

   • Design your system to accommodate a typical access time of 70 nanoseconds for reliable data retrieval.

8. Storage Capacity:

   • Utilize the 256 Mbit storage capacity effectively by organizing data in blocks suitable for the 2,097,152 x 16 memory configuration.

(For reference only)