Details

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BUY 21143TD https://www.utsource.net/itm/p/8150996.html

Parameter	Description
Part Number	21143TD
Type	Silicon Epitaxial Planar Transistor
Polarity	NPN
Collector-Emitter Voltage (Vceo)	80 V
Emitter-Base Voltage (Vebo)	5 V
Collector Current (Ic)	6 A
Power Dissipation (Ptot)	115 W at Tc = 25°C
Storage Temperature Range (Tstg)	-55°C to +150°C
Operating Temperature Range (Tamb)	-55°C to +150°C
Package Type	TO-3
Mounting Type	Through Hole

Instructions for Use:

1. Handling Precautions: Avoid excessive mechanical stress on the leads and body. Handle with care to prevent damage.
2. Soldering: Ensure that the soldering temperature does not exceed 260°C for more than 10 seconds. Allow adequate cooling time post-soldering.
3. Heat Sinking: For optimal performance, especially under high power conditions, use an appropriate heat sink.
4. Mounting: Ensure proper mounting to maintain thermal contact and electrical connections. Follow manufacturer guidelines for torque specifications when tightening screws.
5. Testing: Before final assembly, test the transistor in a controlled environment to ensure it meets all specified parameters.
6. Storage: Store in a dry, cool place away from direct sunlight and sources of heat. Observe polarity during storage and handling to prevent accidental damage.

(For reference only)