Details

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BUY MST7398R-LF https://www.utsource.net/itm/p/8151022.html

Parameter	Description	Value	Unit
Part Number	Device identifier	MST7398R-LF	-
Type	Device type	MOSFET	-
Configuration	Channel configuration	N-Channel	-
Package	Physical package	LFPAK	-
Drain-Source Voltage	Maximum voltage between drain and source	60	V
Gate-Source Voltage	Maximum voltage between gate and source	±20	V
Continuous Drain Current	Maximum continuous current through the drain	47	A
Pulse Drain Current	Peak pulse current through the drain	125	A
Rds(on) @ 4.5V	On-resistance at 4.5V gate-source voltage	2.2	mΩ
Rds(on) @ 10V	On-resistance at 10V gate-source voltage	1.8	mΩ
Power Dissipation	Maximum power dissipation	180	W
Junction Temperature	Maximum operating temperature of the junction	175	°C
Storage Temperature	Temperature range for storage	-55 to 175	°C

Instructions:

1. Installation: Ensure that the device is handled with care to avoid damage. Use appropriate soldering techniques and ensure the correct orientation of the component during installation.
2. Operating Conditions: Operate within the specified voltage and current limits to prevent damage or malfunction. Pay special attention to the maximum drain-source voltage and continuous drain current ratings.
3. Thermal Management: Given the high power dissipation capability, ensure adequate heat sinking or cooling mechanisms are in place to maintain the junction temperature within safe limits.
4. Gate Drive: Apply gate voltages within the specified range to avoid overstressing the gate oxide. Ensure that the gate drive circuitry can provide sufficient current to switch the MOSFET quickly and efficiently.
5. Storage: Store in a dry environment within the specified temperature range to prevent damage from moisture or extreme temperatures.
6. Handling: Use proper ESD (Electrostatic Discharge) precautions when handling the device to prevent damage from static electricity.

(For reference only)