Details

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BUY KLM4G1FEPD-B031 https://www.utsource.net/itm/p/8151405.html

Parameter	Description	Value
Product Name	KLM4G1FEPD-B031
Type	NAND Flash Memory
Capacity	4Gb (512Mb x 8)
Package	WSON8 (6mm x 5mm)
Voltage Supply	Vcc	2.7V to 3.6V
Voltage I/O	Vccq	1.7V to 3.6V
Operating Temperature	Industrial (-40°C to +85°C)
Data Retention	10 years
Endurance	100,000 Program/Erase cycles
Interface	Toggle Mode DTR/SDR
Performance	Up to 400MB/s (Read), 240MB/s (Program)
Command Set	ONFI 2.3 compliant

Instructions for Use:

1. Power Supply Connection:

   • Connect the Vcc pin to a power supply within the specified voltage range (2.7V to 3.6V).
   • Connect the Vccq pin to an I/O supply voltage within the specified range (1.7V to 3.6V).

2. Initialization:

   • Ensure that all power supplies are stable before applying any signals.
   • Initialize the device using the appropriate command sequence as per the ONFI specification.

3. Data Access:

   • Use the Toggle Mode interface for high-speed data transfer.
   • Refer to the datasheet for specific timing parameters and command sequences.

4. Temperature Considerations:

   • Operate the device within the industrial temperature range of -40°C to +85°C to ensure reliable performance.

5. Endurance and Retention:

   • The device supports up to 100,000 program/erase cycles.
   • Data retention is guaranteed for up to 10 years under normal operating conditions.

6. Handling Precautions:

   • Handle with care to avoid electrostatic discharge (ESD) damage.
   • Follow proper soldering guidelines to prevent thermal damage during assembly.

For detailed specifications and advanced features, refer to the official datasheet provided by the manufacturer.

(For reference only)