Details

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BUY K9F1208U0C-PCB0 https://www.utsource.net/itm/p/8151730.html

Parameter	Description
Device Type	NAND Flash Memory
Manufacturer	Samsung
Part Number	K9F1208U0C-PCB0
Density	64 Mbit (8 MB)
Voltage - Supply (Vcc)	3.3 V ( Typical )
Interface	8-bit Parallel NAND
Package / Case	48-TSOP (II)
Operating Temperature	-40°C to +85°C
Data Retention	10 years at 25°C
Erase Block Size	16 KBytes
Page Size	512 Bytes
Program Time (Typ)	200 μs
Block Erase Time (Typ)	2 ms (64KB block)
Endurance	100,000 program/erase cycles

Instructions for Use:

1. Power Supply: Ensure the supply voltage is within the specified range of 3.3V. Avoiding overvoltage can prevent damage to the device.
2. Initialization: Upon power-up, the device should be initialized according to the timing specifications provided in the datasheet.
3. Command Sequence: Follow the command sequence protocol as outlined in the datasheet for read, write, and erase operations.
4. Addressing: The address lines must be properly managed to access the correct memory locations. Ensure no address lines are left floating.
5. Timing Requirements: Adhere strictly to the timing requirements for all operations including read, write, and erase to ensure reliable operation.
6. Error Handling: Implement error handling mechanisms such as bad block management and wear leveling to maintain data integrity over time.
7. Environmental Conditions: Operate the device within the specified temperature range to avoid thermal stress and potential failure.
8. Storage: When not in use, store the device in a dry environment to prevent moisture damage.

(For reference only)