Details

---

BUY R2S30206SP https://www.utsource.net/itm/p/8154250.html

Parameter	Description	Value	Unit
Part Number	Device Part Number	R2S30206SP
Type	Device Type	Power MOSFET
Package	Package Type	TO-220
VDS	Drain-to-Source Voltage	650	V
ID	Continuous Drain Current	20	A
PD	Total Power Dissipation	125	W
RDS(on)	On-State Resistance at VGS=10V	0.078	Ω
VGS(th)	Gate Threshold Voltage	2 to 4	V
TJ	Junction Temperature Range	-55 to 150	°C
SOA	Safe Operating Area	Refer to Datasheet
Storage Temperature	Storage Temperature Range	-55 to 150	°C

Instructions for Use:

1. Mounting and Handling:

   • Ensure the device is handled with care to avoid damage to the leads or package.
   • Follow proper mounting procedures to ensure good thermal contact if heatsinking is required.

2. Electrical Connections:

   • Connect the drain, source, and gate terminals correctly as per the circuit design.
   • Use appropriate wire gauges to handle the current levels specified.

3. Thermal Management:

   • Monitor junction temperature to stay within operational limits.
   • Use adequate heatsinking if operating near maximum power dissipation.

4. Safe Operating Area (SOA):

   • Refer to the datasheet for detailed safe operating area curves to ensure reliable operation under all conditions.

5. Storage:

   • Store in a dry environment within the specified storage temperature range to prevent degradation of performance.

6. Handling Precautions:

   • This device is sensitive to electrostatic discharge (ESD); use appropriate ESD protection measures during handling and assembly.

For more detailed information, refer to the manufacturer's datasheet.

(For reference only)