Details

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BUY K4B1G1646G-BCH9 https://www.utsource.net/itm/p/8155411.html

Parameter	Description	Value
Product Name	K4B1G1646G-BCH9
Manufacturer	Samsung
Type	DDR3 SDRAM
Capacity	1 Gb
Organization	512M x 16
Voltage Supply (Vdd)	1.35 V / 1.5 V
Operating Temperature	-40°C to +85°C
Data Rate	Up to 1866 Mbps
CAS Latency (CL)	11, 13, 15
Refresh	Auto-refresh and self-refresh modes
Package Type	BGA
Pin Count	78
RoHS Compliance	Yes

Instructions for Use:

1. Power Supply:

   • Ensure the supply voltage (Vdd) is set correctly at either 1.35V or 1.5V depending on your system requirements.

2. Installation:

   • Carefully align the component with the socket ensuring all pins are properly seated.
   • Avoid applying excessive force during installation to prevent damage.

3. Initialization:

   • Follow the initialization sequence as per the system's BIOS/UEFI settings.
   • Configure the memory timings according to the specified CAS latency values.

4. Operation:

   • Monitor the operating temperature to ensure it remains within the specified range of -40°C to +85°C.
   • Regularly check for any errors in data transfer and refresh cycles.

5. Handling:

   • Handle with care to avoid ESD (Electrostatic Discharge) damage; use appropriate anti-static measures.
   • Store in an anti-static bag when not in use.

6. Troubleshooting:

   • If encountering issues, verify power supply levels, seating of the module, and system configuration settings.
   • Refer to the datasheet for detailed troubleshooting steps and contact technical support if necessary.

(For reference only)