Details

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BUY M5M5256DFP-85LL https://www.utsource.net/itm/p/8155604.html

Parameter	Description	Value
Product Name	M5M5256DFP-85LL
Type	NAND Flash Memory
Capacity	512Mb (64MB)
Package Type	Thin Small Outline Package (TSOP)
Operating Voltage	Vcc Supply Voltage	2.7V to 3.6V
Interface	Toggle Mode Interface
Data Bus Width	x8
Access Time	tR (Read Access Time)	50ns
Program/Erasure	Page Program Time	200μs
Block Erase Time	Block Erase Time	2ms
Endurance	Write/Erase Cycles	100,000 cycles
Retention	Data Retention	10 years at 25°C
Operating Temperature	Industrial Temperature Range	-40°C to +85°C
Storage Temperature	Storage Temperature Range	-55°C to +125°C

Instructions:

1. Power Supply: Ensure the operating voltage is within the specified range of 2.7V to 3.6V.
2. Initialization: Before performing any read or write operations, initialize the device using the appropriate command sequence as per the datasheet.
3. Programming: Use page program commands for writing data. Ensure each programming operation does not exceed 200μs.
4. Erase Operations: Blocks must be erased before new data can be written. Each block erase should not take more than 2ms.
5. Temperature Considerations: Operate and store the device within the specified temperature ranges to ensure reliability and longevity.
6. Handling: Handle with care to avoid electrostatic discharge (ESD), which can damage the component.
7. Interfacing: Connect the device using the Toggle Mode interface for optimal performance.
8. Error Handling: Implement error correction mechanisms as this NAND flash uses raw NAND technology without built-in ECC.

For detailed command sequences and timing diagrams, refer to the specific datasheet provided by the manufacturer.

(For reference only)