Details

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BUY MD1423R https://www.utsource.net/itm/p/8155692.html

Parameter	Description	Value	Unit
Part Number	Device Identifier	MD1423R	-
Type	Device Type	MOSFET	-
Package	Encapsulation Type	TO-220	-
VDSS	Drain-Source Voltage	200	V
ID	Continuous Drain Current	14.5	A
PD	Power Dissipation	68	W
RDS(on)	On-State Resistance at 25°C	0.075	Ω
Qg	Total Gate Charge	70	nC
VGS(th)	Gate Threshold Voltage	2 to 4	V
EAS	Avalanche Energy	1.5	J
TJ(max)	Maximum Junction Temperature	175	°C

Instructions for Use:

1. Handling Precautions: The MD1423R is sensitive to electrostatic discharge (ESD). Handle with care using appropriate ESD protection measures.
2. Mounting: Ensure proper heat sinking when mounting to manage the power dissipation effectively and maintain device reliability.
3. Biasing: Apply gate voltage within the specified VGS(th) range to ensure reliable operation. Avoid exceeding the maximum ratings.
4. Testing: During testing, ensure that all voltages and currents are within the specified limits to prevent damage to the device.
5. Storage: Store in a dry environment away from direct sunlight and extreme temperatures.
6. Application: Suitable for high-frequency switching applications due to low RDS(on) and total gate charge characteristics.

(For reference only)