Details

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BUY NS681601P https://www.utsource.net/itm/p/8155786.html

Parameter	Description	Value	Unit
Part Number	Device Part Number	NS681601P	-
Type	Device Type	MOSFET	-
Configuration	Channel Configuration	N-Channel	-
VDS	Drain-to-Source Voltage	60	V
VGS(th)	Gate Threshold Voltage	2.0 to 4.0	V
RDS(on) @ VGS=10V	On-State Resistance	35	mΩ
ID	Continuous Drain Current	16	A
Package	Packaging Type	SO-8	-
Operating Temperature	Junction Temperature Range	-55 to +150	°C

Instructions for Use:

1. Handling Precautions: The NS681601P is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures when handling the device.
2. Mounting: Ensure that the device is mounted on a suitable heatsink if operating at high current levels to maintain junction temperature within specified limits.
3. Storage: Store in a dry, cool place and avoid exposure to corrosive environments.
4. Soldering: Follow recommended soldering profiles to avoid thermal damage. Peak temperature should not exceed 260°C for more than 10 seconds.
5. Application Circuits: Refer to application notes provided by the manufacturer for typical circuit configurations and design considerations.

For detailed specifications and application notes, refer to the official datasheet provided by the manufacturer.

(For reference only)