Details

---

BUY PA28F400BVB80 https://www.utsource.net/itm/p/8155826.html

Parameter	Description	Value	Unit
Device Type	Flash Memory
Organization	4M x 8
Voltage - Supply (Vcc)	Operating Supply Voltage Range	2.7 to 3.6	V
Temperature - Junction (Tj)	Maximum Junction Temperature	125	°C
Package / Case	TSSOP-32
Mounting Type	Surface Mount
Data Retention Time	Data Retention at 85°C	10	Years
Programming Cycle	Endurance Cycles	100,000	Cycles
Access Time	Typical Access Time	70	ns
Block Erase Time	Typical Block Erase Time	200	ms
Chip Erase Time	Typical Chip Erase Time	3000	ms
Write Cycle Time	Typical Write Cycle Time	200	μs

Instructions:

1. Power Supply: Ensure the supply voltage is within the specified range of 2.7V to 3.6V.
2. Temperature Management: Operate the device within its maximum junction temperature limit of 125°C.
3. Programming and Erasing:
   • Follow the manufacturer's recommended procedures for programming and erasing cycles.
   • Do not exceed 100,000 endurance cycles to maintain reliability.
4. Data Retention: Store data within the device for up to 10 years under typical conditions.
5. Access Timing: Account for a typical access time of 70ns in system design.
6. Erase Times:
   • Plan for a block erase time of approximately 200ms.
   • Plan for a chip erase time of approximately 3000ms.
7. Write Operations: Allocate sufficient time for write operations, considering a typical cycle time of 200μs.
8. Mounting: Use surface mount techniques suitable for TSSOP-32 packaging.

For detailed specifications and application notes, refer to the datasheet provided by the manufacturer.

(For reference only)