Details
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Parameter | Description | Value |
---|---|---|
Device Type | Non-Volatile Ferroelectric Random Access Memory (FRAM) | FM25L256-PG |
Memory Density | 256 Kbit (32 K x 8) | |
Operating Voltage | Supply voltage range | 1.8V to 3.6V |
Standby Current | Current consumption in standby mode | 1 μA |
Active Current | Current consumption during read/write operations | 3 mA |
Access Time | Time required for a memory access | 70 ns |
Write Cycle Time | Time required for write cycle | 0 ns (No delay) |
Endurance | Number of write cycles the device can endure | Unlimited |
Data Retention | Duration data can be retained without power | >10 years |
Temperature Range | Operating temperature range | -40°C to +85°C |
Package Type | Package style | SOIC-8 |
Pin Configuration | Pin configuration | SPI |
Instructions for Use:
Power Supply:
- Connect VCC to a stable supply voltage between 1.8V and 3.6V.
- Connect GND to the ground.
SPI Interface Connection:
- Connect MISO (Master In Slave Out) to the microcontroller's MISO pin.
- Connect MOSI (Master Out Slave In) to the microcontroller's MOSI pin.
- Connect SCK (Serial Clock) to the microcontroller's clock pin.
- Connect CS (Chip Select) to the microcontroller's chip select pin.
Initialization:
- Ensure CS is held high when not communicating with the FRAM.
- Before initiating any SPI communication, bring CS low.
Read Operation:
- Send the Read command (0x03) followed by the address from which to read.
- The FRAM will respond with the data starting from the specified address.
Write Operation:
- Send the Write command (0x02) followed by the address where to start writing and then the data bytes.
- Data is written immediately; no need for a write enable cycle.
Special Considerations:
- Since it's FRAM, there is no need for a write pulse or delay after writes.
- Be cautious about static electricity as it can damage the component.
Storage:
- Store in a dry, cool place away from direct sunlight and sources of heat.
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