Details

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BUY IRFD110 https://www.utsource.net/itm/p/8284098.html

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-source On Resistance	RDS(on)	VGS = 10V, ID = 4A		0.25		Ω
Gate Threshold Voltage	VGS(th)	ID = 1mA	1.0	1.5	2.5	V
Input Capacitance	Ciss	VDS = 10V, f = 1MHz		380		pF
Output Capacitance	Coss	VDS = 10V, f = 1MHz		60		pF
Reverse Transfer Capacitance	Crss	VDS = 10V, f = 1MHz		37		pF
Continuous Drain Current	ID	TC = 25°C		11		A
Pulse Drain Current	IDM	t = 10ms, Duty = 1%		50		A
Power Dissipation	PD	TC = 25°C		90		W
Junction Temperature	Tj		-55		150	°C

Instructions for Use:

1. Handling Precautions:

   • The IRFD110 is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.

2. Mounting:

   • Ensure the device is securely mounted on a heatsink if operating at high power levels to maintain junction temperature within safe limits.

3. Biasing:

   • Apply gate voltage carefully. Exceeding the maximum gate threshold voltage can cause damage. Typically, VGS should not exceed ±20V.

4. Operating Conditions:

   • Operate within specified continuous and pulse current ratings. Exceeding these ratings can lead to device failure.

5. Storage:

   • Store in a dry environment and avoid exposure to corrosive substances.

6. Testing:

   • When testing the device, ensure that all parameters are within the specified limits provided in the table above.

(For reference only)