Details

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BUY IRF7204 https://www.utsource.net/itm/p/8338900.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDSS	-	-	60	V
Gate-Source Voltage	VGS	-12	-	12	V
Continuous Drain Current	ID	-	7.4	-	A	TC = 25°C
Pulse Drain Current	IDM	-	38	-	A	tPW = 100 μs, Duty = 1%
RDS(on)	RDS(on)	0.019	-	0.025	Ω	VGS = 10V, TC = 25°C
Input Capacitance	CISS	-	1280	-	pF	VDS = 15V, VGS = 0V
Output Capacitance	COSS	-	220	-	pF	VDS = 15V, VGS = 0V
Reverse Transfer Capacitance	CRSS	-	120	-	pF	VDS = 15V, VGS = 0V
Total Gate Charge	QG	-	50	-	nC	VGS = 10V

Instructions for Use:

1. Voltage Ratings:

   • Ensure that the drain-source voltage (VDSS) does not exceed 60V.
   • Keep the gate-source voltage (VGS) within the range of -12V to +12V.

2. Current Handling:

   • Operate the device within the continuous drain current (ID) limit of 7.4A at 25°C case temperature.
   • For pulse operations, do not exceed 38A with a pulse width of 100μs and a duty cycle of 1%.

3. On-Resistance:

   • The on-resistance (RDS(on)) is specified at 10V gate-source voltage and 25°C. Ensure this condition is met for optimal performance.

4. Capacitance Parameters:

   • Consider the input capacitance (CISS), output capacitance (COSS), and reverse transfer capacitance (CRSS) when designing circuits to minimize switching losses.

5. Gate Drive Requirements:

   • Account for the total gate charge (QG) in your gate driver design to ensure reliable switching.

6. Thermal Management:

   • Monitor the junction temperature and provide adequate heat sinking if necessary to maintain the device within safe operating limits.

7. Handling Precautions:

   • Handle the MOSFET carefully to avoid damage from electrostatic discharge (ESD). Use appropriate ESD protection measures.

(For reference only)