Details

---

BUY CT60AM-20 https://www.utsource.net/itm/p/8339168.html

Parameter	Description	Value	Unit
Part Number	Component Identifier	CT60AM-20	-
Type	Device Type	MOSFET	-
Package	Encapsulation Style	TO-220	-
VDS	Drain-to-Source Voltage	60	V
VGS(th)	Gate Threshold Voltage	2 to 4	V
ID	Continuous Drain Current	20	A
Ptot	Total Power Dissipation	40	W
RDS(on)	On-State Resistance at VGS = 10V	0.035	Ω
TJ	Junction Temperature Range	-55 to 150	°C

Instructions for Use:

1. Handling Precautions:

   • Avoid electrostatic discharge (ESD). Use appropriate ESD protection when handling the device.

2. Mounting:

   • Ensure proper heat sinking if operating near maximum power dissipation to maintain junction temperature within specified limits.

3. Soldering:

   • Use a soldering iron with a temperature not exceeding 300°C. Soldering time should be kept under 10 seconds per joint.

4. Storage:

   • Store in a dry, cool place away from direct sunlight and sources of heat.

5. Application Notes:

   • For optimal performance, ensure that the gate voltage does not exceed the maximum VGS rating.
   • Verify that the drain current does not exceed the continuous drain current rating under any operating conditions.

6. Testing:

   • Before installing, test the component using an appropriate MOSFET tester to ensure it meets all electrical specifications.

(For reference only)