Details
BUY VS-10MQ040NTRPBF https://www.utsource.net/itm/p/8374623.html
Parameter | Description |
---|---|
Part Number | VS-10MQ040NTRPBF |
Type | MOSFET - Metal Oxide Semiconductor Field Effect Transistor |
Package Type | TO-252 (DPAK) |
Polarity | N-Channel |
Drain Source Voltage | 100 V |
Continuous Drain Current | 40 A (at Ta = 25°C), 36 A (at Tc = 25°C) |
RDS(on) | 4.0 mΩ (at VGS = 10 V, ID = 27 A) |
Gate Charge | 89 nC |
Input Capacitance | 1590 pF |
Total Power Dissipation | 15 W (at Ta = 25°C), 48 W (at Tc = 25°C) |
Operating Temperature Range | -55°C to +150°C |
Storage Temperature Range | -65°C to +175°C |
Mounting Type | Surface Mount |
Instructions:
- Handling Precautions: Use proper anti-static precautions when handling the device to prevent damage from electrostatic discharge.
- Soldering: Ensure that soldering temperature does not exceed the maximum junction temperature of the device. Follow recommended reflow profiles for surface mount components.
- Heat Sinks: For applications requiring high current or power dissipation, consider using heat sinks or other cooling methods to maintain operating temperatures within specified limits.
- Circuit Design: Ensure that the circuit design accounts for the continuous drain current and voltage ratings to avoid overstress conditions.
- Storage: Store in a dry environment within the specified storage temperature range to prevent degradation of electrical characteristics.
- Installation: Verify correct orientation during installation to prevent short circuits or incorrect connections.
View more about VS-10MQ040NTRPBF on main site