Details

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BUY FGH50T65SQD-F155 https://www.utsource.net/itm/p/8408576.html

Parameter	Value	Unit
Part Number	FGH50T65SQD-F155	-
Type	MOSFET	-
Configuration	N-Channel	-
Voltage (Vds)	650	V
Current (Id)	50	A
Power Dissipation	287.5	W
Rds(on)	155	mΩ
Gate Charge	135	nC
Junction Temperature	-55 to 150	°C
Package	TO-247-3L	-

Instructions:

1. Handling and Storage: Store in a dry, cool place away from direct sunlight. Handle with care to avoid damage to the leads and body.
2. Mounting: Ensure proper heat sinking if operating near maximum current or power dissipation limits. Follow manufacturer guidelines for mounting torque and thermal interface materials.
3. Electrical Connections: Verify all connections are secure and correct before applying power. Use appropriate insulation and isolation techniques.
4. Operating Conditions: Do not exceed the maximum ratings listed in the parameter table. Monitor junction temperature to ensure it remains within safe operating limits.
5. Testing: Before full-scale operation, conduct thorough testing under controlled conditions to validate performance and reliability.

(For reference only)