Details

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BUY IRFB4310ZPBF https://www.utsource.net/itm/p/8408701.html

Parameter	Symbol	Test Conditions	Min	Typical	Max	Unit
Drain-Source On-Resistance	RDS(on)	VGS = 10V, ID = 25A	4.0		5.0	mΩ
Gate Charge	QG			73		nC
Input Capacitance	Ciss	VDS = 0V, f = 1MHz		2640		pF
Output Capacitance	Coss	VDS = 100V, f = 1MHz		280		pF
Reverse Transfer Capacitance	Crss	VDS = 100V, f = 1MHz		2360		pF
Threshold Voltage	VGS(th)	ID = 250μA	2.0		4.0	V
Continuous Drain Current	ID	TC = 25°C		59		A
Pulse Drain Current	IDpeak	tp = 10ms, TC = 25°C		230		A
Power Dissipation	PD	TC = 25°C		110		W
Junction Temperature	TJ		-55		150	°C

Instructions for Use:

1. Mounting and Handling:

   • Handle the IRFB4310ZPBF with care to avoid damage to the leads and body.
   • Ensure proper mounting to a heatsink if operating at high power levels.

2. Biasing:

   • Apply gate-source voltage (VGS) within the specified range to ensure reliable operation.
   • Ensure VGS does not exceed the maximum ratings to prevent damage.

3. Thermal Management:

   • Monitor junction temperature (TJ) to stay within the operational limits.
   • Use appropriate thermal management techniques like heatsinks or cooling fans as necessary.

4. Electrical Connections:

   • Verify all connections are secure and correct before applying power.
   • Ensure the device is properly isolated from other circuit components to prevent short circuits.

5. Storage and Environment:

   • Store in a dry, cool place away from direct sunlight and corrosive substances.
   • Avoid exposure to environments that exceed the specified temperature and humidity ranges.

6. Testing:

   • When testing, adhere to the test conditions outlined in the parameter table for accurate measurements.
   • Use compatible equipment and settings for testing parameters such as capacitance and charge.

(For reference only)