Details

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BUY IRFS4410ZTRLPBF https://www.utsource.net/itm/p/8409885.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source On Resistance	RDS(on)	-	6.5	-	mΩ	VGS = 10V, ID = 20A, TJ = 25°C
Gate Charge	QG	-	34	-	nC
Input Capacitance	Ciss	-	1170	-	pF	VDS = 10V
Output Capacitance	Coss	-	280	-	pF	VDS = 10V
Reverse Transfer Capacitance	Crss	-	900	-	pF	VDS = 10V
Threshold Voltage	VGS(th)	2	4	6	V	ID = 250μA
Continuous Drain Current	ID	-	-	39	A	TC = 25°C
Pulse Drain Current	IDM	-	-	110	A	TP = 10ms
Maximum Gate-Source Voltage	VGS(max)	-15	-	15	V
Maximum Drain-Source Voltage	VDS(max)	-	-	55	V

Instructions for Use:

1. Mounting and Handling: Handle the IRFS4410ZTRLPBF with care to avoid damage to the leads and body. Ensure that the device is mounted on a suitable heatsink if operating at high currents or in environments where temperature can rise significantly.

2. Gate Drive Requirements: The gate requires a drive voltage of typically 10V for optimal performance. Ensure the gate drive circuitry can provide sufficient current to charge and discharge the gate capacitance quickly for efficient switching.

3. Thermal Considerations: Monitor the junction temperature (TJ) to ensure it does not exceed the maximum allowable limit. Adequate cooling measures should be taken, especially under continuous operation at high currents.

4. Storage and Operation Temperature: Store the device in a dry environment and operate within the specified temperature range to prevent thermal stress and potential failure.

5. Electrostatic Discharge (ESD) Protection: The MOSFET is sensitive to ESD. Use appropriate precautions such as anti-static wrist straps and mats during handling.

6. Circuit Design: When designing circuits, consider the maximum ratings provided to ensure reliable operation. Avoid exceeding the maximum drain-source voltage (VDS(max)) and gate-source voltage (VGS(max)).

7. Safety Margin: It is advisable to design circuits with a safety margin below the absolute maximum ratings to account for variations and unexpected conditions.

(For reference only)