Details
BUY 2SA1213Y(10pcs) https://www.utsource.net/itm/p/8412637.html
| Parameter | Description | Value |
|---|---|---|
| Part Number | Transistor type | 2SA1213Y |
| Package Quantity | Number of units in package | 10 pcs |
| Type | Bipolar Junction Transistor (BJT) | PNP |
| Collector-Emitter Voltage (VCEO) | Maximum voltage from collector to emitter | 60 V |
| Emitter-Collector Voltage (VECO) | Maximum voltage from emitter to collector | 60 V |
| Collector-Base Voltage (VCBO) | Maximum voltage from collector to base | 60 V |
| Emitter-Base Voltage (VEBO) | Maximum voltage from emitter to base | 5 V |
| Continuous Collector Current (IC) | Maximum continuous current through collector | 4 A |
| Power Dissipation (PD) | Maximum power dissipation at Tc = 25°C | 65 W |
| Transition Frequency (ft) | Frequency at which gain is unity | 15 MHz |
| Storage Temperature Range (Tstg) | Temperature range for storage | -55°C to +150°C |
| Operating Temperature Range (Topr) | Temperature range for operation | -55°C to +150°C |
| Mounting Type | Method of attachment | Through-hole |
| Lead Finish | Surface finish of leads | Tin |
Instructions:
- Handling Precautions: Use proper anti-static precautions when handling the transistors to prevent damage from electrostatic discharge.
- Mounting: Ensure that the transistor is securely mounted with appropriate heat sinking if operating near maximum power dissipation.
- Soldering: Do not exceed soldering temperatures or durations that could damage the device. Recommended soldering temperature is up to 260°C for no more than 10 seconds.
- Storage: Store in a dry, cool place within the specified storage temperature range to avoid damage.
- Application Design: Ensure that the application design does not exceed the maximum ratings provided in this table to prevent damage or malfunction of the transistor.
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