MJE5852G

MJE5852G


Specifications
SKU
8413209
Details

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Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Voltage VCEO IC = 0 120 V
Emitter-Base Voltage VEBO IE = 5mA -5 V
Collector-Base Voltage VCBO IC = 0 120 V
Collector Current IC 15 15 A
Power Dissipation PD Tc = 25°C 115 W
Storage Temperature Tstg -65 150 °C
Operating Temperature TJ -65 150 °C

Instructions for MJE5852G:

  1. Handling Precautions:

    • Avoid exposing the device to temperatures outside the operating range (-65°C to 150°C).
    • Handle with care to avoid mechanical damage.
  2. Mounting and Soldering:

    • Ensure proper heat sinking if operating near maximum power dissipation.
    • Follow standard soldering practices; excessive heat can damage the device.
  3. Electrical Characteristics:

    • Do not exceed the maximum ratings listed in the table.
    • For reliable operation, ensure that all voltages and currents remain within specified limits.
  4. Storage:

    • Store in a dry, cool place away from direct sunlight.
    • Protect from static electricity by using anti-static packaging.
  5. Application Notes:

    • The MJE5852G is suitable for general-purpose switching and amplification applications.
    • Refer to datasheets for detailed application circuits and typical performance characteristics.
(For reference only)

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