Details

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BUY SVF7N80F https://www.utsource.net/itm/p/8423966.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-Source On-State Resistance	RDS(on)	-	80	-	mΩ	VGS = 10V, ID = 20A
Gate Charge	QG	-	45	-	nC	VDS = 500V, ID = 20A
Input Capacitance	Ciss	-	2600	-	pF	VDS = 25V
Output Capacitance	Coss	-	350	-	pF	VDS = 500V
Total Capacitance	Crss	-	200	-	pF	VDS = 500V
Threshold Voltage	Vth	2.0	4.0	6.0	V	ID = 1mA
Maximum Drain Current	ID(MAX)	-	-	75	A	TC = 25°C
Power Dissipation	PD	-	-	140	W	TC = 25°C
Junction Temperature	TJ	-	-	150	°C	-

Instructions for Use:

1. Handling Precautions: The SVF7N80F is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures when handling the device.
2. Mounting: Ensure proper heat dissipation by mounting the device on a heatsink if operating near maximum power dissipation limits.
3. Gate Drive: To ensure reliable operation, apply gate drive voltages within specified limits. Avoid excessive voltage which can damage the gate oxide.
4. Storage and Operation: Store in a dry environment and operate within the temperature range specified to avoid thermal damage.
5. Testing: For accurate testing of parameters like RDS(on), ensure that the test conditions match those specified in the datasheet.

For detailed specifications and application notes, refer to the manufacturer's datasheet.

(For reference only)