IRF6218PBF

IRF6218PBF

Category: Transistors

Specifications
SKU
8656723
Details

BUY IRF6218PBF https://www.utsource.net/itm/p/8656723.html

Parameter Symbol Conditions Min Typ Max Unit
Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A 5.0 - 7.0
Gate Threshold Voltage VGS(th) ID = 250μA 2.0 - 4.0 V
Continuous Drain Current ID TC = 25°C - 38 - A
TC = 70°C - 29 - A
Pulse Drain Current ID(pulse) tp = 10ms, Rep Rate = 10Hz - 120 - A
Total Power Dissipation PD TC = 25°C - 160 - W
TC = 70°C - 100 - W
Junction Temperature TJ - - - 150 °C
Storage Temperature Range Tstg - -55 - 150 °C

Instructions for IRF6218PBF:

  1. Handling Precautions:

    • Avoid exposing the device to temperatures exceeding its maximum junction temperature (150°C).
    • Use proper anti-static precautions to prevent damage.
  2. Installation:

    • Ensure that the mounting surface is flat and clean.
    • Torque screws to the recommended specifications to avoid damaging the component.
  3. Operation:

    • Operate within specified current and voltage limits to ensure reliable performance.
    • For pulse applications, ensure the duty cycle does not exceed the thermal capabilities of the device.
  4. Storage:

    • Store in a dry environment within the storage temperature range (-55°C to 150°C).
  5. Mounting:

    • Mount with adequate heatsinking if operating near the maximum power dissipation limits.
  6. Testing:

    • Test the device under controlled conditions before deployment in final applications.
(For reference only)

View more about IRF6218PBF on main site