Details

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BUY NTMFS4921NT1G https://www.utsource.net/itm/p/8724069.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source On-Resistance	RDS(on)	-	25	-	mΩ @ 4.5V, 8.5A	On-resistance at specified conditions
Gate-Threshold Voltage	VGS(th)	0.7	-	1.6	V	Gate threshold voltage
Continuous Drain Current	ID	-	-	30	A	Continuous drain current
Pulse Drain Current	ID(pulse)	-	-	59	A	Pulse drain current
Power Dissipation	PD	-	-	2.4	W	Maximum power dissipation
Junction Temperature	TJ	-20	-	150	°C	Operating junction temperature range
Storage Temperature	TSTG	-55	-	150	°C	Storage temperature range

Instructions for NTMFS4921NT1G:

1. Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and installation.
2. Mounting: Ensure that the mounting process does not exceed the maximum ratings provided in the table to prevent damage.
3. Thermal Management: Given the operating junction temperature range, ensure adequate heat dissipation mechanisms are in place, especially under high current or power conditions.
4. Biasing Conditions: Operate within the specified gate-source voltage (VGS) and drain-source voltage (VDS) limits to avoid damaging the device.
5. Pulsed Operation: For applications requiring pulsed operation, verify that pulse widths and frequencies do not exceed the device's capabilities as defined by ID(pulse).
6. Storage: Store in a dry environment within the temperature range specified by TSTG to maintain reliability and performance.

(For reference only)