Details

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BUY TC7MBL3245CFT https://www.utsource.net/itm/p/8724211.html

Parameter	Description	Value	Unit
Device Type	32Mb (4M x 8) Low Power Mobile SDRAM
Package Type	Fine Pitch Ball Grid Array (FBGA)
Operating Voltage	VDD, VDDQ	1.8	V
Data Width	x8		bits
Bank Architecture	4 banks
Row Address Bits	12		bits
Column Address Bits	9		bits
CAS Latency	CL = 2, 3		clocks
Burst Length	2, 4, 8
Refresh Rate	8K refresh cycles per 64ms
Operating Temperature	Commercial: 0°C to 70°C		°C
Industrial Temperature	-40°C to 85°C		°C

Instructions for Use

1. Power Supply: Ensure the power supply voltage (VDD and VDDQ) is set to 1.8V as specified.
2. Initialization: Upon power-up, initialize the device by sending a mode register set command with the desired burst length and CAS latency settings.
3. Refresh Management: Implement an automatic or self-refresh mechanism to maintain data integrity. The device requires 8,192 refresh cycles every 64ms.
4. Addressing: Configure the address lines according to the row and column address bits provided. Use the bank select lines to access different banks.
5. Data Access: Set the burst length and CAS latency based on system requirements. Adjust these parameters via the mode register.
6. Temperature Considerations: Operate within the specified temperature range to ensure reliable performance. For industrial applications, use the extended temperature range.
7. Signal Integrity: Ensure proper signal integrity on all control, address, and data lines to prevent data corruption.
8. Termination: Use appropriate termination resistors on the data bus to minimize reflections and improve signal quality.

For detailed timing diagrams and specific commands, refer to the datasheet provided by the manufacturer.

(For reference only)