Details

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BUY FDS4935A https://www.utsource.net/itm/p/8724304.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-50		50	V
Gate-Source Voltage	VGS	-12		12	V
Continuous Drain Current	ID		6.7		A	TC = 25°C, VGS = 10V
Pulse Drain Current	IDM		34		A	t = 100μs, Duty cycle < 1%
Gate Charge	QG		8.9		nC	VDS = 20V, VGS = 10V
Input Capacitance	Ciss		200		pF	VDS = 0V
Output Capacitance	Coss		60		pF	VDS = 20V
Reverse Transfer Capacitance	Crss		50		pF	VDS = 20V
RDS(on)	RDS(on)		0.035		Ω	VGS = 10V, ID = 6.7A
Threshold Voltage	Vth	1.0	1.5	2.0	V	ID = 250μA

Instructions for Use:

1. Handling Precautions:

   • The FDS4935A is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD precautions.

2. Mounting and Storage:

   • Store in a dry place away from direct sunlight.
   • Ensure proper mounting on the PCB to avoid mechanical stress.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the parameter table.
   • Ensure adequate heat sinking if operating at high current or power levels.

4. Testing and Measurement:

   • When measuring parameters such as RDS(on), ensure that the device is tested under specified conditions to get accurate results.

5. Gate Drive Requirements:

   • Apply gate voltages within the specified range to prevent damage to the gate oxide layer.
   • Use appropriate gate drive circuits to switch the MOSFET efficiently and minimize switching losses.

6. Thermal Management:

   • Monitor the temperature of the device during operation. Excessive temperature can degrade performance and reliability.

7. Application Specific Considerations:

   • For applications involving high-frequency switching, consider parasitic capacitances and their impact on switching speed and efficiency.
   • Ensure that the PCB layout minimizes parasitic inductances which can affect performance.

(For reference only)