Details
BUY FA5528N-A2-TE1 https://www.utsource.net/itm/p/8786158.html
| Parameter | Description |
|---|---|
| Part Number | FA5528N-A2-TE1 |
| Type | MOSFET |
| Configuration | N-Channel |
| Drain Source Voltage | 55V |
| Continuous Drain Current | 28A (at Tc = 25°C) |
| Rds(on) | 4.5 mΩ (at Vgs = 10V, Id = 20A) |
| Gate Charge | 65 nC |
| Total Power Dissipation | 170W (at Ta = 25°C) |
| Operating Temperature Range | -55°C to +175°C |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
Instructions for Use:
- Handling Precautions: This device is sensitive to ESD (Electrostatic Discharge). Use proper anti-static measures during handling and installation.
- Heat Sinks: For applications where the device will operate near its maximum current or power ratings, ensure adequate heat sinking to maintain junction temperature within safe limits.
- Gate Drive: Ensure that gate drive signals are clean and do not exceed the maximum ratings. Proper decoupling capacitors should be used near the gate driver circuitry.
- Storage Conditions: Store in a dry, cool place away from direct sunlight and corrosive environments.
- Soldering: Follow standard soldering profiles for TO-220AB packages. Avoid excessive heat and time to prevent damage to the device.
For detailed application notes and further specifications, refer to the manufacturer's datasheet.
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