MDF2N60BTH

MDF2N60BTH

Category: Transistors

Specifications
SKU
8829040
Details

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Parameter Symbol Min Typ Max Unit Description
Blocking Voltage V_B 600 V Maximum repetitive peak reverse voltage
Continuous Current I_C 2 A RMS value of the maximum continuous sinusoidal current
Peak Pulse Current I_P 8 A Non-repetitive peak pulse current
Junction Temperature T_J -55 150 °C Operating junction temperature range
Storage Temperature T_STG -55 150 °C Operating storage temperature range
Total Device Dissipation P_T 3.6 W Maximum power dissipation

Instructions for MDF2N60BTH

  1. Handling Precautions:

    • Avoid exposing the device to high temperatures or humidity.
    • Use proper anti-static measures when handling.
  2. Mounting and Soldering:

    • Ensure correct orientation during mounting to avoid damage.
    • Follow recommended soldering profiles to prevent thermal shock.
  3. Electrical Connections:

    • Verify all electrical connections are secure and correctly wired.
    • Do not exceed the maximum ratings specified in the parameter table.
  4. Thermal Management:

    • Provide adequate heat sinking if operating near maximum power dissipation.
    • Monitor junction temperature to ensure it remains within operational limits.
  5. Testing:

    • Test the device under controlled conditions before deploying in final applications.
    • Ensure testing environments do not exceed the device's specified operating parameters.
(For reference only)

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