Details

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BUY NDP6060 https://www.utsource.net/itm/p/8833288.html

Parameter	Description	Value
Part Number	Device identifier	NDP6060
Type	Device type	N-Channel MOSFET
Package	Housing type	TO-252 (DPAK)
VDS (V)	Drain-source voltage	60V
ID (A)	Continuous drain current	6.0A
RDS(on) (Ω)	On-resistance	0.045Ω (Max at 25°C, VGS=10V)
VGS(th) (V)	Gate-source threshold voltage	2.0V to 4.0V
Qg (nC)	Total gate charge	37nC
PD (W)	Power dissipation (package)	2.25W
SOA (A/V)	Safe operating area	Refer to datasheet graph
Operating Temp	Operating temperature range	-55°C to +150°C

Instructions for Use:

1. Handling Precautions: The NDP6060 is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
2. Mounting: Ensure proper heat sinking if operating near maximum power dissipation limits.
3. Soldering: Follow recommended soldering profiles to avoid damage due to excessive heat.
4. Biasing: Ensure that the gate voltage does not exceed the specified limits to prevent device damage.
5. Testing: When testing the device, adhere to the safe operating area (SOA) guidelines provided in the datasheet.
6. Storage: Store in a dry environment and follow first-in-first-out (FIFO) inventory management practices.

(For reference only)